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Kioxia was launched at IEDM 2024 new cutting-edge technology

Matte Jr
Kioxia was launched at IEDM 2024 new cutting-edge technology

Innovative presentation of anwendungen for KI-, Computer- und Speichersysteme

TOKYO, October 22, 2024–(BUSINESS WIRE)–A Kioxia Corporation, a world leader from December 7th to 11th in San Francisco, USA, stattfindet.

Kioxia got involved for the Forschung und Entwicklung von Halbleiterspeichern, die für die Weiterentwicklung der KI and the digital transformation of the Gesellschaft unerlässlich sind. Neben seiner hochmodernen dreidimensionalen (3D) Flash-Speichertechnologie BiCS FLASH™ zeichnet sich Kioxia durch seine Forschung im Bereich neuartiger Speicherlösungen aus. Das Unternehmen ist ständig bestrebt, Bedarf un zukünftigen Computer- und Speichersystemen mit innovativ Speicherprodukten zu decken.

The best computer systems have DRAM, a primary means of communication, once the CPU is reliable, data is transferred to be used, then Flash-Speicher for high-performance data. Kioxia is an integral part of Storage Class Memory (SCM) storage and storage, a special function, which is divided into a storage capacity hierarchy between DRAM and Flash memory, and is used to increase the number of DRAM data and increase Flash memory performance is cool.

With the innovative Kioxia technology based on IEDM, these three types of halbleiterspeicherebenen zugeschnitten are: (1) a new type of DRAM, the oxide oxide used and the reduction of energy storage capacity, (2) MRAM, of the highest capacities for SCM – The answer is obtained and (3) a new structure of a 3D speaker in Flash with unique bits and content.

Neue Speichertechnologien:

1. Oxid-Halbleiter-Kanal-Transistor-DRAM (OCTRAM) : This technology was acquired by Nanya Technology and Kioxia Corporation. Die Unternehmen entwickelten einen Vertikalen Transistor, der die Schaltungsintegration durch Verbesserung des Herstellungsprozesses verbessert. Os Unternehmen erreichten einen extrem niedrigen Leckstrom, indem sie the Eigenschaften des Transistors com eines Oxid-Halbleiters herausstellten. This may be the case for a post-5G communication system, a KI- and post-5G communication system, which can generate IoT products, probably without success.

Papers Title: Oxid Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture (Oxid-Halbleiter-Kanal-Transistor-DRAM (OCTRAM) with 4F2 Architecture) (Paper number: 6-1)

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